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mrf5s9080nr1 MRF5S9080NBR1 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for gsm and gsm edge base station applications with frequencies from 869 to 960 mhz. suitable for tdma, cdma, and multicarrier amplifier applications. gsm application ? typical gsm performance: v dd = 26 volts, i dq = 600 ma, p out = 80 watts cw, full frequency band (869 - 894 mhz or 921 - 960 mhz). power gain ? 18.5 db drain efficiency ? 60% gsm edge application ? typical gsm edge performance: v dd = 26 volts, i dq = 550 ma, p out = 36 watts avg., full frequency band (869 - 894 mhz or 921 - 960 mhz). power gain ? 19 db drain efficiency ? 42% spectral regrowth @ 400 khz offset = - 63 dbc spectral regrowth @ 600 khz offset = - 78 dbc evm ? 2.5% rms ? capable of handling 10:1 vswr, @ 26 vdc, 960 mhz, 80 watts cw output power features ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? 200 c capable plastic package ? rohs compliant ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain- source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 0.5, +15 vdc storage temperature range t stg - 65 to +150 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 79 c, 80 w cw case temperature 80 c, 36 w cw r jc 0.50 0.54 c/w 1. mttf calculator available at http://www.freescale.com/rf . select tools/software/application software/calculators to access the mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mrf5s9080n rev. 1, 5/2006 freescale semiconductor technical data mrf5s9080nr1 MRF5S9080NBR1 869 - 960 mhz, 80 w, 26 v gsm/gsm edge lateral n - channel rf power mosfets case 1484 - 04, style 1 to-272 wb-4 plastic MRF5S9080NBR1 case 1486 - 03, style 1 to - 270 wb - 4 plastic mrf5s9080nr1 ? freescale semiconductor, inc., 2006. all rights reserved.
2 rf device data freescale semiconductor mrf5s9080nr1 MRF5S9080NBR1 table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1b (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iv (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 - a113, ipc/jedec j - std - 020 3 260 c table 5. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 500 nadc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 400 adc) v gs(th) 2 2.8 3.5 vdc gate quiescent voltage (v ds = 26 vdc, i d = 600 madc, measured in functional test) v gs(q) 3.5 3.9 4.5 vdc drain- source on - voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.27 0.3 vdc dynamic characteristics (1) reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.8 ? pf output capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 600 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 26 vdc, i dq = 600 ma, p out = 80 w cw, f = 960 mhz power gain g ps 17 18.5 20 db drain efficiency d 55 60 ? % input return loss irl ? -15 -9 db p out @ 1 db compression point p1db 80 90 ? w typical gsm edge performances (in freescale gsm edge test fixture, 50 ohm system) v dd = 26 vdc, i dq = 550 ma, p out = 36 w avg., 869- 894 mhz, 920 - 960 mhz gsm edge modulation power gain g ps ? 19 ? db drain efficiency d ? 42 ? % error vector magnitude evm ? 2.5 ? % rms spectral regrowth at 400 khz offset sr1 ? -63 ? dbc spectral regrowth at 600 khz offset sr2 ? -77 ? dbc 1. part is internally matched on input.
mrf5s9080nr1 MRF5S9080NBR1 3 rf device data freescale semiconductor z1 1.220 x 0.087 microstrip z2 1.110 x 0.087 microstrip z3 0.536 x 0.087 microstrip z4 0.310 x 0.087 microstrip z5 0.430 x 0.591 microstrip z6 1.567 x 0.059 microstrip z7 0.734 x 0.788 microstrip z8 0.138 x 0.087 microstrip z9 0.411 x 0.087 microstrip z10 0.403 x 0.087 microstrip z11 0.560 x 0.087 microstrip z12, z13 1.693 x 0.087 microstrip pcb taconic tlx8 - 0300, 0.030 , r = 2.55 figure 1. mrf5s9080nr1(nbr1) test circuit schematic ? 900 mhz v bias v supply rf output rf input c10 c1 r1 r2 c4 c7 r3 dut c12 c13 c14 z1 z2 z3 z4 z6 z5 c19 c20 c17 c15 z7 c18 c16 z12 c8 c5 c2 c21 + z8 z9 z11 c11 z10 c9 c6 c3 z13 table 6. mrf5s9080nr1(nbr1) test circuit component designations and values ? 900 mhz part description part number manufacturer c1, c2, c3 4.7 f chip capacitors (1812) c4532x5r1h475mt tdk c4, c5, c6 10 nf 200b chip capacitors 200b103mw atc c7, c8, c9 33 pf 600b chip capacitors 600b330jw atc c10, c11 22 pf 600b chip capacitors 600b220fw atc c12 1.8 pf 600b chip capacitor 600b1r8bw atc c13 9.1 pf 600b chip capacitor 600b9r1bw atc c14, c17, c18 8.2 pf 600b chip capacitors 600b8r2bw atc c15, c16 10 pf 600b chip capacitors 600b100fw atc c19 4.7 pf 600b chip capacitor 600b4r7bw atc c20 3.6 pf 600b chip capacitor 600b3r6bw atc c21 220 f, 63 v electrolytic capacitor, axial 13668221 philips r1, r2 10 k , 1/4 w chip resistors (1206) r3 10 , 1/4 w chip resistor (1206)
4 rf device data freescale semiconductor mrf5s9080nr1 MRF5S9080NBR1 figure 2. mrf5s9080nr1(nbr1) test circuit component layout ? 900 mhz cut out area c4 c13 v gg v dd c7 c1 r1 r2 r3 c14 c10 c12 c9 c15 c6 c17 c20 c11 c19 c16 c18 c21 c2 c8 c5 mrf5s9080n/nb rev. 1 c3
mrf5s9080nr1 MRF5S9080NBR1 5 rf device data freescale semiconductor typical characteristics - 900 mhz g ps , power gain (db) g ps , power gain (db) g ps , power gain (db) 1020 16.5 19.5 860 ?40 80 60 19 40 18 20 0 17 ?20 880 900 920 940 960 980 1000 input return loss (db) irl, f, frequency (mhz) figure 3. power gain, input return loss and drain efficiency versus frequency @ p out = 80 watts cw irl g ps v dd = 26 vdc i dq = 600 ma d , drain efficiency (%) d 18.5 17.5 g ps , power gain (db) 1020 18.2 19.2 860 ?40 60 40 19 18.6 20 0 ?20 880 900 920 940 960 980 1000 input return loss (db) irl, f, frequency (mhz) figure 4. power gain, input return loss and drain efficiency versus frequency @ p out = 36 watts cw irl g ps v dd = 26 vdc i dq = 600 ma d , drain efficiency (%) d 18.8 18.4 1000 14 20 1 i dq = 900 ma p out , output power (watts) figure 5. power gain versus output power v dd = 26 vdc f = 940 mhz 600 ma 18 17 16 15 10 100 200 13 20 0 p out , output power (watts) cw figure 6. power gain versus output power v dd = 12 v 16 v 24 v 28 v 32 v 18 17 16 15 50 100 150 20 v 19 750 ma 450 ma 300 ma i dq = 600 ma f = 940 mhz 19 14
6 rf device data freescale semiconductor mrf5s9080nr1 MRF5S9080NBR1 typical characteristics - 900 mhz g ps , power gain (db) 1000 1 0 70 g ps t c = ?30 c p out , output power (watts) cw figure 7. power gain and drain efficiency versus cw output power v dd = 26 vdc i dq = 600 ma f = 940 mhz 25 c 85 c 25 c 85 c 100 10 60 50 40 30 20 10 14 21 20 19 18 17 16 15 980 0 6 900 p out = 53 w avg. f, frequency (mhz) figure 8. evm versus frequency evm, error vector magnitude (% rms) v dd = 28 vdc i dq = 550 ma 13 w avg. 3 w avg. 5 4 3 2 1 910 920 930 940 950 960 970 d 100 0 1 0 evm p out , output power (watts) avg. figure 9. evm and drain efficiency versus output power evm, error vector magnitude (% rms) t c = 85 c 25 c ?30 c v dd = 26 vdc i dq = 600 ma f = 940 mhz edge modulation 8 80 6 60 4 40 20 2 10 980 ?90 ?50 900 sr @ 400 khz f, frequency (mhz) figure 10. spectral regrowth at 400 khz and 600 khz versus frequency spectral regrowth @ 400 khz and 600 khz (dbc) v dd = 28 vdc i dq = 550 ma f = 940 mhz edge modulation ?60 ?70 ?80 910 920 930 940 950 960 970 p out = 53 w avg. 13 w avg. 3 w avg. d , drain efficiency (%) d , drain efficiency (%) d ?30 c 100 ?80 ?45 0 t c = 85 c p out , output power (watts) avg. figure 11. spectral regrowth @ 400 khz versus output power spectral regrowth @ 400 khz (dbc) 25 c ?30 c ?55 ?65 ?75 20 40 80 100 ?85 ?55 0 p out , output power (watts) avg. figure 12. spectral regrowth @ 600 khz versus output power spectral regrowth @ 600 khz (dbc) ?65 ?75 ?80 20 40 60 80 ?50 ?60 ?70 60 ?70 ?60 t c = 85 c 25 c ?30 c ?55 ?65 ?75 ?85 sr @ 600 khz 53 w avg. 13 w avg. 3 w avg. v dd = 26 vdc i dq = 600 ma f = 940 mhz edge modulation v dd = 26 vdc i dq = 600 ma f = 940 mhz edge modulation
mrf5s9080nr1 MRF5S9080NBR1 7 rf device data freescale semiconductor typical characteristics t j , junction temperature ( c) this above graph displays calculated mttf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mttf factor by i d 2 for mttf in a particular application. figure 13. mttf factor versus junction temperature 210 1.e+07 1.e+09 90 mttf factor (hours x amps 2 ) 1.e+08 100 110 120 130 140 150 160 170 180 190 200 gsm test signal figure 14. edge spectrum ?10 ?20 ?30 ?40 ?50 ?60 ?70 ?80 ?90 ?100 200 khz span 2 mhz center 1.96 ghz ?110 400 khz 600 khz 400 khz 600 khz (db) reference power vbw = 30 khz sweep time = 70 ms rbw = 30 khz
8 rf device data freescale semiconductor mrf5s9080nr1 MRF5S9080NBR1 figure 15. series equivalent source and load impedance ? 900 mhz f mhz z source z load 845 865 5.31 - j5.59 5.05 - j1.99 6.07 - j4.16 1.18 - j0.34 1.09 - j0.29 1.22 - j0.29 v dd = 26 vdc, i dq = 600 ma, p out = 80 w cw z o = 10 f = 990 mhz f = 990 mhz f = 845 mhz f = 845 mhz 890 920 3.47 - j0.81 1.10 - j0.21 z load z source z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network 2.64 - j0.88 1.05 - j0.15 960 990 1.89 - j1.14 0.91 - j0.18
mrf5s9080nr1 MRF5S9080NBR1 9 rf device data freescale semiconductor figure 16. mrf5s9080nr1(nbr1) test circuit schematic ? 800 mhz v bias v supply rf output rf input c10 c1 r1 r2 c4 c7 r3 dut c12 c13 c14 z1 z2 z3 z4 z6 z5 c19 c20 c17 c15 z7 c18 c16 z12 c8 c5 c2 c21 + z8 z9 z11 c11 z10 c9 c6 c3 c22 + z13 z1 1.220 x 0.087 microstrip z2 1.110 x 0.087 microstrip z3 0.536 x 0.087 microstrip z4 0.310 x 0.087 microstrip z5 0.430 x 0.591 microstrip z6 1.567 x 0.059 microstrip z7 0.734 x 0.788 microstrip z8 0.138 x 0.087 microstrip z9 0.411 x 0.087 microstrip z10 0.403 x 0.087 microstrip z11 0.560 x 0.087 microstrip z12, z13 1.693 x 0.087 microstrip pcb taconic tlx8 - 0300, 0.030 , r = 2.55 table 7. mrf5s9080nr1(nbr1) test circuit component designations and values ? 800 mhz part description part number manufacturer c1, c2, c3 4.7 f chip capacitors (1812) c4532x5r1h475mt tdk c4, c5, c6 10 nf 200b chip capacitors 200b103mw atc c7, c8, c9 33 pf 600b chip capacitors 600b330jw atc c10, c11 22 pf 600b chip capacitors 600b220fw atc c12 1.8 pf 600b chip capacitor 600b1r8bw atc c13 9.1 pf 600b chip capacitor 600b9r1bw atc c14, c17, c18 8.2 pf 600b chip capacitors 600b8r2bw atc c15, c16 10 pf 600b chip capacitors 600b100fw atc c19 4.7 pf 600b chip capacitor 600b4r7bw atc c20 3.6 pf 600b chip capacitor 600b3r6bw atc c21, c22 220 f, 50 v electrolytic capacitors, radial 678d227m050dm3d vishay r1, r2 10 k , 1/4 w chip resistors (1206) r3 10 , 1/4 w chip resistor (1206)
10 rf device data freescale semiconductor mrf5s9080nr1 MRF5S9080NBR1 figure 17. mrf5s9080nr1(nbr1) test circuit component layout ? 800 mhz cut out area v gg v dd c13 mrf5s9080n/nb rev. 1 c1 r2 r1 c4 c7 r3 c10 c12 c14 c9 c6 c3 c22 c11 c20 c19 c15 c17 c18 c16 c8 c5 c2 c21
mrf5s9080nr1 MRF5S9080NBR1 11 rf device data freescale semiconductor typical characteristics - 800 mhz g ps , power gain (db) 940 14 20 820 ?40 80 40 19 17 20 0 16 ?20 840 860 880 900 920 input return loss (db) irl, f, frequency (mhz) figure 18. power gain, input return loss and drain efficiency versus frequency @ p out = 80 watts irl g ps v dd = 26 vdc i dq = 600 ma d , drain efficiency (%) d 18 g ps , power gain (db) 940 12 22 820 ?40 60 40 20 16 20 0 14 ?20 840 860 880 900 920 input return loss (db) irl, f, frequency (mhz) figure 19. power gain, input return loss and drain efficiency versus frequency @ p out = 36 watts irl g ps v dd = 26 vdc i dq = 600 ma d , drain efficiency (%) d 18 910 0 5 850 p out = 50 w avg. f, frequency (mhz) figure 20. evm versus frequency evm, error vector magnitude (% rms) v dd = 28 vdc i dq = 550 ma 20 w avg. 5 w avg. 4 3 2 1 860 870 880 890 900 d 100 0 1 0 evm p out , output power (watts) avg. figure 21. evm and drain efficiency versus output power evm, error vector magnitude (% rms) t c = 25 c 7 70 660 4 40 20 2 10 d , drain efficiency (%) 5 3 1 50 30 10 v dd = 28 vdc i dq = 550 ma f = 880 mhz edge modulation 15 60
12 rf device data freescale semiconductor mrf5s9080nr1 MRF5S9080NBR1 typical characteristics - 800 mhz 920 ?85 ?50 840 sr @ 400 khz f, frequency (mhz) figure 22. spectral regrowth at 400 khz and 600 khz versus frequency spectral regrowth @ 400 khz and 600 khz (db v dd = 28 vdc i dq = 550 ma f = 880 mhz edge modulation ?60 ?70 ?80 850 860 870 880 890 900 910 p out = 50 w avg. 20 w avg. 5 w avg. ?55 ?65 ?75 sr @ 600 khz 50 w avg. 20 w avg. 5 w avg. 100 ?75 ?45 1 t c = 25 c p out , output power (watts) avg. figure 23. spectral regrowth @ 400 khz versus output power spectral regrowth @ 400 khz (dbc) ?55 ?65 ?50 ?60 ?70 10 v dd = 28 vdc i dq = 550 ma f = 880 mhz edge modulation 100 ?85 ?65 1 p out , output power (watts) avg. figure 24. spectral regrowth @ 600 khz versus output power spectral regrowth @ 600 khz (dbc) ?75 ?80 10 ?70 t c = 25 c v dd = 28 vdc i dq = 550 ma f = 880 mhz edge modulation
mrf5s9080nr1 MRF5S9080NBR1 13 rf device data freescale semiconductor notes
14 rf device data freescale semiconductor mrf5s9080nr1 MRF5S9080NBR1 notes
mrf5s9080nr1 MRF5S9080NBR1 15 rf device data freescale semiconductor notes
16 rf device data freescale semiconductor mrf5s9080nr1 MRF5S9080NBR1 package dimensions case 1486 - 03 issue c to - 270 wb - 4 plastic mrf5s9080nr1 datum plane bottom view a1 2x d1 e3 e1 d3 e4 a2 pin 5 note 8 a b c h drain lead d a m aaa c 4x b1 2x d2 notes: 1. controlling dimension: inch. 2. interpret dimensions and tolerances per asme y14.5m?1994. 3. datum plane ?h? is located at the top of lead and is coincident with the lead where the lead exits the plastic body at the top of the parting line. 4. dimensions ? d" and ? e1" do not include mold protrusion. allowable protrusion is .006 per side. dimensions ? d" and ? e1" do include mold mismatch and are deter? mined at datum plane ?h?. 5. dimension ? b1" does not include dambar protrusion. allowable dambar protrusion shall be .005 total in excess of the ? b1" dimension at maximum material condition. 6. datums ?a? and ?b? to be determined at datum plane ?h?. 7. dimension a2 applies within zone ? j" only. 8. hatching represents the exposed area of the heat slug. c1 f zone j e2 2x a dim a min max min max millimeters .100 .104 2.54 2.64 inches a1 .039 .043 0.99 1.09 a2 .040 .042 1.02 1.07 d .712 .720 18.08 18.29 d1 .688 .692 17.48 17.58 d2 .011 .019 0.28 0.48 d3 .600 ? ? ? 15.24 ? ? ? e .551 .559 14 14.2 e1 .353 .357 8.97 9.07 e2 .132 .140 3.35 3.56 e3 .124 .132 3.15 3.35 e4 .270 ? ? ? 6.86 ? ? ? f b1 .164 .170 4.17 4.32 c1 .007 .011 0.18 0.28 e .025 bsc .106 bsc 0.64 bsc 2.69 bsc 1 style 1: pin 1. drain 2. drain 3. gate 4. gate 5. source aaa .004 0.10 gate lead 4x e 2x e seating plane 4 2 3 ??????? ??????? ??????? ??????? ??????? ??????? ??????? ??????? ??????? ??????? ??????? ??????? ??????? note 7 e5 e5 e5 .346 .350 8.79 8.89
mrf5s9080nr1 MRF5S9080NBR1 17 rf device data freescale semiconductor
18 rf device data freescale semiconductor mrf5s9080nr1 MRF5S9080NBR1
mrf5s9080nr1 MRF5S9080NBR1 19 rf device data freescale semiconductor
20 rf device data freescale semiconductor mrf5s9080nr1 MRF5S9080NBR1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 fax: 303 - 675- 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf5s9080n rev. 1, 5/2006

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